| PART |
Description |
Maker |
| IKW75N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
|
Infineon
|
| 1N4508A |
Diode Switching 600V 22A 2-Pin DO-4
|
New Jersey Semiconductors
|
| IGB30N60H3 |
600V high speed switching series third generation
|
Infineon Technologies AG
|
| RJK6025DPE RJK6025DPE-00J3 RJK6025DPE12 |
600V - 0.8A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6026DPP-E0 |
600V - 5A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S1DPD-00J2 |
600V - 8A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6011DJA-15 |
600V - 0.1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6035DPP-E0 RJK6035DPP-E0-15 |
600V - 6A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJP60F5DPK-15 |
600V - 40A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| STGW40NC60WD GW40NC60WD |
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| CM15TF-12H |
IGBT Modules: 600V
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
